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APTGT200DH120G
Asymmetrical - Bridge Fast Trench + Field Stop IGBT(R) Power Module
VBUS Q1 G1 CR3
VCES = 1200V IC = 200A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Switched Reluctance Motor Drives Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant
E1
OUT1 OUT2
Q4 G4 CR2 E4
0/VBUS
OUT1 G1 E1 VBUS 0/VBUS
E4 G4 OUT2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
V W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-5
APTGT200DH120G - Rev 1
Reverse Bias Safe Operating Area
400A @ 1100V
July, 2006
Max ratings 1200 280 200 400 20 890
Unit V A
APTGT200DH120G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 200A Tj = 125C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 350 2.1 6.5 500 Unit A V V nA
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 200A R G = 2.7 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 200A R G = 2.7 VGE = 15V Tj = 125C VBus = 600V IC = 200A Tj = 125C R G = 2.7
Min
Typ 14 0.8 0.6 260 30 420 70 290 50 520 90 20
Max
Unit nF
ns
ns
mJ 20
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
Test Conditions VR=1200V IF = 200A VGE = 0V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C IF = 200A VR = 600V
di/dt =2500A/s
Min 1200
Typ
Max 350 600
Unit V A A
200 1.6 1.6 170 280 18 36 10 18
2.1
V ns C mJ
July, 2006 2-5 APTGT200DH120G - Rev 1
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
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APTGT200DH120G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.14 0.25 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3-5
APTGT200DH120G - Rev 1
July, 2006
APTGT200DH120G
Typical Performance Curve
400 Output Characteristics (VGE =15V) Output Characteristics 400 T J = 125C
TJ=125C
300 IC (A)
TJ=25C
300 IC (A)
V GE=17V
VGE =13V VGE=15V
200
200
VGE =9V
100
100
0 0 1 2 VCE (V) 3 4
0 0 1 2 VCE (V) 3 4
Transfert Characteristics 400 350 300 E (mJ) 250 IC (A) 200 150 100 50 0 5 6 7 8 9 10 11 12 V GE (V) Switching Energy Losses vs Gate Resistance 50 40 E (mJ) 30 20 10 0 0 4 8 12 16 Gate Resistance (ohms) 20
VCE = 600V VGE =15V IC = 200A T J = 125C
Eon
50 40
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 2.7 T J = 125C Eon Eoff Er Eon
TJ=25C TJ=125C
30 20 10 0 0
TJ=125C
50
100 150 200 250 300 350 400 IC (A)
Reverse Bias Safe Operating Area 450 400 350 300 IF (A)
Eoff Er
250 200 150 100 50 0 0 300 600 900 VCE (V) 1200 1500
VGE =15V T J=125C RG=2.7
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 Thermal Impedance (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
IGBT
0 0.00001
rectangular Pulse Duration (Seconds)
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4-5
APTGT200DH120G - Rev 1
July, 2006
APTGT200DH120G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50
ZVS VCE=600V D=50% RG =2.7 TJ=125C Tc=75C
Forward Characteristic of diode 400 350 300 250 IF (A) 200 150 100
T J=125C T J=25C
40 30 20 10 0 0 40 80 120 160 IC (A)
Hard switching ZCS
TJ =125C
50 0 200 240 280 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT200DH120G - Rev 1
July, 2006

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